http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020134204-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cfdd2235626b581d886d535ab65cb79 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-311 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2019-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82ab3cf25ec287f520a010abffd090f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_254f2128a1cc216c6a3de603910396b3 |
| publicationDate | 2020-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2020134204-A1 |
| titleOfInvention | Method for manufacturing quantum dot light-emitting diode |
| abstract | A method for manufacturing a quantum dot light-emitting diode, comprising the following steps: providing a substrate provided with an electron transport layer (S01); depositing a solution on the surface of the electron transport layer, leaving it stand until the electron transport layer is wetted, and then drying same, wherein the solution comprises a main solvent and a solute dissolved in the main solvent, the polarity of the solute is greater than the polarity of the main solvent, and the electron transport material in the electron transport layer is not dissolved in the solution (S02); manufacturing other film layers on the electron transport layer treated by the mixed solvent to manufacture a quantum dot light-emitting diode, and making the quantum dot light-emitting diode comprise at least the following structure: an anode and a cathode opposite to each other, a quantum dot light-emitting layer disposed between the anode and the cathode, and an electron transport layer disposed between the quantum dot light-emitting layer and the cathode (S03). |
| priorityDate | 2018-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 108.