| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb823e72d0004ded507f810e2db46fb5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F2200-372 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F1-083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F1-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-45475 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F1-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F1-08 |
| filingDate |
2019-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10bd4ccaab2ce7f716790eddf6947b89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bfb1958f30e9a6cf0d32e67853b133f |
| publicationDate |
2020-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020109924-A1 |
| titleOfInvention |
Charge preamplifier device and radiation detecting apparatus comprising the device |
| abstract |
A charge preamplifier device (100) integrated in a chip (200) of semiconductive material comprising: an input (IN) for an input signal (iiN) and an output (OUT) for an output signal (VOUT); a substrate (202) of semiconductive material doped according to a first type of conductivity; an electrically insulating layer (204) placed on said substrate (202); a feedback capacitor (Cf) integrated in the chip (200) and comprising a first electrode (3) connected to the input (IN) and a second electrode (2) connected to the output (OUT). The second electrode (2) is formed by a doped conductive region (205) having a second type of conductivity, opposite to the first type of conductivity, and integrated in the substrate (202) in order to face the first electrode (3). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021130608-A1 |
| priorityDate |
2018-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |