| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7968c51b44c029611add4a3db3901113 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2019-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5974265d47903ddf31ab90a747aad133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4aa52f9da4afbe956761301080e51fff |
| publicationDate |
2020-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020107753-A1 |
| titleOfInvention |
Thin-film transistor and preparation method and system therefor |
| abstract |
A thin-film transistor and a preparation method and system therefor. The thin-film transistor comprises a substrate (10), a buffer layer (20), an active layer (30), and a gate insulation layer (50). Doping modification is performed on a side region of the active layer (30), so that the surface thereof becomes a high-resistance region. The gate insulation layer (50) is prepared by using chemical deposition process, which avoids forming a weak channel current when edges are unintentionally opened during operation due to thin gate insulation layer (50), improving the electrical reliability of the thin-film transistor. |
| priorityDate |
2018-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |