http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020106552-A1

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filingDate 2019-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff871b6d5f35acb71c1d63fca6638c00
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publicationDate 2020-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020106552-A1
titleOfInvention Magnetoresistive stack with seed region and method of manufacturing the same
abstract A magnetoresistive stack/ structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/- 10%) and less than or equal to 60 Angstroms (+/- 10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/- 10%) or 30-50 atomic percent (+/- 10%).
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priorityDate 2018-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 47.