Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c10320b05f723976a898536f012b60c2 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2019-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1d9f5ed22e42012900a92cf0bb5685c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bae42beec36e91d67c657918b5fb093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a6ab0659409d402ecbfde942405fffb |
publicationDate |
2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2020102353-A1 |
titleOfInvention |
Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning |
abstract |
A processing method includes receiving a substrate containing a base layer having a mandrel pattern formed thereon containing a number of features, conformally depositing a silicon oxide film over the mandrel pattern by coating surfaces of the substrate with a metal-containing catalyst layer, and in the absence of any oxidizing and hydrolyzing agent, exposing the substrate to a process gas containing a silanol gas at a substrate temperature selected to yield a preferred level of stress in the silicon oxide film. The method further includes removing the silicon oxide film from upper surfaces of the mandrel pattern and lower surfaces adjacent the mandrel pattern to leave behind silicon oxide sidewall spacers on sidewalls of the mandrel pattern, and removing the mandrel pattern from the substrate to leave behind the silicon oxide sidewall spacers that form a new pattern having double the number of features of the removed mandrel pattern. |
priorityDate |
2018-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |