| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6caea61bfde8a45e01a8deabff80d97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11568 |
| filingDate |
2019-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2299a025a2aed6b0c65d5bff46b62bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c02572981ba2bfb0272532e9bee3d429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38186f603b236b5cf68056e00c9b3729
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b93389fb44e0db9a4291ffdd1de29952 |
| publicationDate |
2020-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020096674-A1 |
| titleOfInvention |
Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same |
| abstract |
A vertical repetition of a unit layer stack including an insulating layer, a sacrificial material layer, and a nucleation promoter layer is formed over a substrate. Memory stack structures are formed through the vertical repetition. Each of the memory stack structures comprises a memory film and a vertical semiconductor channel. Backside recesses are formed by removing the sacrificial material layers selective to the insulating layers and the nucleation promoter layers within the vertical repetition. Electrically conductive layers are formed in the backside recesses by selectively growing a metallic material from physically exposed surfaces of the nucleation promoter layers while suppressing growth of the metallic material from physically exposed surfaces of the insulating layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I783283-B |
| priorityDate |
2018-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |