http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020095126-A1

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filingDate 2019-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64e66d29cab5b6f06db7b5d4aa39e34e
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publicationDate 2020-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020095126-A1
titleOfInvention A high‐bandwidth thermoelectric thin‐film uv, visible light and infrared radiation sensor and a method for manufacturing thereof
abstract The invention relates to UV, visible light and infrared radiation sensors, in particular to high-bandwidth thin-film electromagnetic radiation sensors, operating using the principle of thermoelectric effect. According to one embodiment the sensor comprises: a thermoelectric active layer (3), an electrode layer one (2) and an electrode layer two (4), wherein the electrode layer one (2) is located below the thermoelectric active layer (3) and the electrode layer two (4) is located above the thermoelectric active layer (3), whereby the sensor is designed so that the thermal gradient can be created and the electrical voltage can be measured perpendicular to the thermoelectric active layer (3), between the electrode layer one (2) and the electrode layer two (4), wherein the material of the thermoelectric active layer (3) is low molecular weight organic compound, selected so that its thermal conductivity would be less than 1W/(m K^2 ), Seebeck coefficient modulus would be greater than 100 μV/K and its molecular weight is less than 900 Da.
priorityDate 2019-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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