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filingDate 2019-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020088844-A1
titleOfInvention Metal–insulator–semiconductor field effect transistor
abstract A metal–insulator–semiconductor field effect transistor (MISFET) having a drain (104), a source (106) and a gate (102), said transistor being configured to form a channel in a channel region between the drain (104) and the source (106) when the gate (102) is driven, said channel enabling a current flow between the source (106) and the drain (104), wherein a voltage-dependent series resistor (108) is formed in an integrated manner in the metal–insulator–semiconductor field effect transistor (100), said resistor being arranged between the source (106) and the channel region and being configured to influence the current flow between the source (106) and the drain (104).
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