| abstract |
The present disclosure relates to a laminated body that has at least a base-material layer that contains at least a flexible base material, and an inorganic thin film layer, wherein a distribution curve of IO2/ISi has at least one maximum value (IO2/ISi)maxBD in a region BD between a depth B and a depth D, where, in a depth profile measured by using a time-of-flight secondary ion mass spectrometer (TOF-SIMS) in a thickness direction from a surface on the inorganic thin film layer side of the laminated body: ionic strengths of Si-, C-, and O2 - are assumed to be ISi, IC, and IO2, respectively; in an ionic strength curve of C-, an average ionic strength of a region A1, in which absolute values of coefficients of variation of the ionic strength values on a base-material-layer side are within 5%, is assumed to be ICA1, a depth that is the closest to the region A1 in a region that is farther on an inorganic-thin-film-layer surface side than the region A1 is, and that indicates an ionic strength that is greater than ICA1 by a factor of 0.5 or less is assumed to be A2, and a depth that is the closest to the A2 in a region that is farther on the inorganic-thin-film-layer surface side than the A2 is, and that indicates a minimum value is assumed to be A3; and, in a first derivative curve of the ionic strength of C-, a depth that is the closest to the A3 in a region that is farther on the inorganic-thin-film-layer surface side than the A3 is, and at which the derivative thereof is equal to or greater than 0 is assumed to be B, a depth that is the closest to the A3 in a region that is farther on the base-material-layer side than the A3 is and that indicates a maximum value d(IC)max of differential distribution values is assumed to be C, and a depth that is the closest to the C in a region that is even farther on the base-material-layer side than the C is, and at which the absolute value of the derivative is greater than d(IC)max by a factor of 0.01 or less is assumed to be D. |