Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-54 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0632 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-0883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-06 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-02 |
filingDate |
2019-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b52ff01cdfe1d79a615d7a82fd20fc9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bac12d102ed531448a79cde056e9f5d |
publicationDate |
2020-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2020075946-A1 |
titleOfInvention |
Method for manufacturing gallium nitride quantum dots doped with metal ions |
abstract |
The present application relates to a method for manufacturing gallium nitride quantum dots and, more specifically, to a method for manufacturing gallium nitride quantum dots doped with metal ions by using a wet-based synthesis method whereby the fluorescence energy of pure gallium nitride can be lowered through the introduction of metal ions. |
priorityDate |
2018-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |