| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06V40-1318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F21-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-152
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 |
| filingDate |
2019-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55080bc2baf3403e794577451f345f43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9f5d7091fb29ee5bf68e87225c83c13 |
| publicationDate |
2020-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020071223-A1 |
| titleOfInvention |
Photoelectric conversion element and manufacturing method thereof |
| abstract |
The present invention reduces the dark current ratio. This photoelectric conversion element 10 includes: an anode 16; a cathode 12; an active layer 14 provided between the anode and the cathode; and at least one layer of an electron transport layer 13 provided between the active layer and the cathode. The electron transport layer includes an insulating material and a semiconductor material, and the difference between the work function of the electron transport layer and the work function of the cathode is 0.88 eV or greater. With the photoelectric conversion element, furthermore, the active layer includes a p-type semiconductor material and an n-type semiconductor material, and a work function (Wf1) of the electron transport layer and a LUMO energy level (LUMO) of the n-type semiconductor material satisfy formula (2). | LUMO | – Wf1 ≥ 0.06 eV (2) |
| priorityDate |
2018-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |