| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4583 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2018-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94859bd2a2953abc5382e44fa7a81ed6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1b02cb6ae759d37c7ca1487b988021e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97f860b34ccad66e4d07067631717f77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f55b5a358904e9ba4f58a3d86bee431 |
| publicationDate |
2020-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020068139-A1 |
| titleOfInvention |
Asymmetric wafer bow compensation |
| abstract |
Methods for reducing warpage of bowed semiconductor substrates, particularly saddle-shaped bowed semiconductor substrates, are provided herein. Methods involve depositing a bow compensation layer by plasma enhanced chemical vapor deposition on the backside of the bowed semiconductor substrate by region, such as by quadrants, to form a compressive film on a tensile substrate and a tensile film on a compressive substrate. Methods involve flowing different gases from different nozzles on a surface of a showerhead to deliver various gases by region in a one-step operation or flowing gases in a multi-step process by shielding regions of the showerhead during delivery of gases to deliver specific gases from non-shielded regions onto regions of the bowed semiconductor substrate by alternating between rotating the semiconductor substrate and flowing gases to the backside of the bowed semiconductor substrate. Alternative methods involve depositing a bow compensation layer by physical vapor deposition on the backside of the bowed semiconductor substrate in regions to form a compressive film on a tensile substrate and a tensile film on a compressive substrate. Methods involve sputtering material onto a backside of a substrate using a shadow mask or by using more than one target and rotating the semiconductor substrate being sputtering operations. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I785592-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022119732-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022235499-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023102376-A1 |
| priorityDate |
2018-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |