| abstract |
The application refers to an optoelectronic component comprising a semiconductor chip comprising a multiplicity of pixels, each pixel emitting electromagnetic primary radiation from a radiation exit surface, wherein on at least a part of the radiation exit surfaces conversion layers are applied, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in said matrix. The conversion layers have a thickness of ≤ 30 pm. |