| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a864329f69db5da3ce856121f76fe371 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-13 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-46 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-46 |
| filingDate |
2018-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_685656b69902aa2425d9ebbb16449e7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f00752a26e3c176b4d7f6268cbd010c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42c35f2d19566e83ec5b202dfd332b1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28bc4b8b2c7c4d1574d663f9f778cf8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b00cd6b49fe4760434c5e4f5fde9f1f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_226f932cb32a51b4c706505a8e752480
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_035e801bd09fcc5b17feeee8bb99481b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67ed24b5818c29851536f33ae920790a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e6af1107660e92e4f8d8ab78e4e0614 |
| publicationDate |
2020-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020034234-A1 |
| titleOfInvention |
Composite material having pn junction structure for supercapacitor, electrode material for supercapacitor and preparation method therefor |
| abstract |
The present invention relates to a composite material having a pn junction structure for a supercapacitor, an electrode material for a supercapacitor and a preparation method therefor. Said method comprises forming pn junctions between p-type oxide particles and n-type oxide particles by means of subjecting a p-type semiconducting oxide powder and an n-type semiconducting oxide powder to a physical or chemical process. These oxide particles having pn junctions can improve the resistance value of a supercapacitor material while quickly compensating for insertion charge of the charge/discharge process by means of the pn junctions. Therefore, the problem of large drop of the resistance value due to the introduction of a carbon-related material or a metal powder is avoided, thereby greatly improving the operating voltage and increasing the energy storage density. Compared to the original p-type oxides such as MnO2, the composite material obtained by the method of the present invention can improve not only the operating voltage but also the specific capacitance. |
| priorityDate |
2018-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |