| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14678 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 |
| filingDate |
2019-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_156acd32b2e84398d9bb38f6b842d86c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55080bc2baf3403e794577451f345f43 |
| publicationDate |
2020-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020026976-A1 |
| titleOfInvention |
Light detecting element |
| abstract |
This light detecting element has a simple configuration, and is highly sensitive to a prescribed wavelength region. The light detecting element comprises a positive electrode, a negative electrode, and an active layer that is provided between the positive electrode and the negative electrode, and that includes a p-type semiconductor material and n-type semiconductor material. The thickness of the active layer is at least 800 nm. The weight ratio between the p-type semiconductor material and the n-type semiconductor material included in the active layer (p/n ratio) is at most 99/1. The work function of the negative electrode side surface in contact with the active layer is lower than the absolute value of the LUMO energy level of the n-type semiconductor material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115052939-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115052939-B |
| priorityDate |
2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |