abstract |
The purpose of the present invention is to form a LTPS-TFT and an oxide semiconductor TFT within the same substrate in a display device. To this end, the present invention is configured in the manner described below. This display device comprises a substrate 100 having formed thereon a first TFT in which a polysilicon semiconductor 102 is used and a second TFT in which an oxide semiconductor 108 is used. The display device is characterized in that a first gate insulating film 103 is formed so as to cover the polysilicon semiconductor 102, a first gate electrode 104 is formed on the first gate insulating film 103, the oxide semiconductor 108 is formed at a position separated from the first gate electrode 104 on the first gate insulating film 103, a second gate insulating film 110 is formed so as to cover the oxide semiconductor 108, a second gate electrode 112 is formed on the second gate insulating film 110, and an interlayer insulating film 113 is formed so as to cover the second gate electrode 112. |