http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020021938-A1

Outgoing Links

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filingDate 2019-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be92a13b9d254d900b19d942a670b5f9
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publicationDate 2020-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020021938-A1
titleOfInvention Display device
abstract The purpose of the present invention is to form a LTPS-TFT and an oxide semiconductor TFT within the same substrate in a display device. To this end, the present invention is configured in the manner described below. This display device comprises a substrate 100 having formed thereon a first TFT in which a polysilicon semiconductor 102 is used and a second TFT in which an oxide semiconductor 108 is used. The display device is characterized in that a first gate insulating film 103 is formed so as to cover the polysilicon semiconductor 102, a first gate electrode 104 is formed on the first gate insulating film 103, the oxide semiconductor 108 is formed at a position separated from the first gate electrode 104 on the first gate insulating film 103, a second gate insulating film 110 is formed so as to cover the oxide semiconductor 108, a second gate electrode 112 is formed on the second gate insulating film 110, and an interlayer insulating film 113 is formed so as to cover the second gate electrode 112.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023286168-A1
priorityDate 2018-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.