| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b02fb4923b61a06d4b0c40ec8dd01d2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2101-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B19-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate |
2019-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fc6b9807e9f4c63f85a1b1a4aa84a39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0623888300e909e2a4f06e8d65621076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b6576af34482a8c1649ee59639fcc2f |
| publicationDate |
2020-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020015697-A1 |
| titleOfInvention |
Quantum dot light-emitting diode and preparation method therefor |
| abstract |
A quantum dot light-emitting diode and a preparation method therefor. The quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer provided between the anode and the cathode, a composite electron transport layer being provided between the cathode and the quantum dot light-emitting layer, and the composite electron transport layer comprising an electron transport material and an ultraviolet absorbing material. The composite electron transport layer of the quantum dot light-emitting diode contains the electron transport material and the ultraviolet absorbing material, and functional groups in the ultraviolet absorbing material are bonded to vacancies or dangling bonds on the surface of the electron transport material, so as to passivate surface defects of the electron transport material, thereby avoiding the luminescence quenching of the quantum dot light-emitting diode, and improving the luminescence property of devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112094642-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112094642-A |
| priorityDate |
2018-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |