http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020010056-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_447017a95b31009750124aae2395b205 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-073 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-14 |
| filingDate | 2019-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70c01de4a2817127620ebc327559dc94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5770c725ecdc9b0f79f74c8d2ec64596 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0114c66fc2e051e09787834ee96ad2a5 |
| publicationDate | 2020-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2020010056-A1 |
| titleOfInvention | Techniques for joining dissimilar materials in microelectronics |
| abstract | Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and/or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1 °C temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO3 to various conventional substrates in a process for making various novel optical and acoustic devices. |
| priorityDate | 2018-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.