| abstract |
Provided are a solid-state imaging element, a solid-state imaging device, an electronic instrument, and a method for manufacturing the solid-state imaging element, with which it is possible to improve characteristics. The present invention provides a solid-state imaging element (10) that comprises a layered structure having a semiconductor substrate (500), a first photoelectric conversion unit (PD200) that is provided above the semiconductor substrate and converts light into an electrical charge, and a second photoelectric conversion unit (PD100) that is provided above the first photoelectric conversion unit and converts light into an electrical charge. The first and second photoelectric conversion units have a photoelectric conversion layered structure in which a common electrode (102, 202), a photoelectric conversion film (104, 204), and a readout electrode (108, 208) are layered so that the first and second photoelectric conversion units are in line symmetry with each other, the axis of symmetry being a perpendicular surface that is perpendicular to the direction in which the layered structure is layered. |