http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019230313-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate | 2019-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca9ec45d973f08c63f3563cd36b0da7b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d104fd2245bdf5654068f4517465a2f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51bcb7a1b463dd5d5dd5f8a7c0597a84 |
| publicationDate | 2019-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2019230313-A1 |
| titleOfInvention | Mask blank, phase-shift mask, and semiconductor device manufacturing method |
| abstract | Provided is a mask blank equipped with a phase-shift film which has reduced rear-side reflectance and which has both a function of allowing exposure light from an ArF excimer laser to transmit therethrough with a predetermined transmittance, and a function of generating a predetermined phase difference with respect to the transmitting exposure light from the ArF excimer laser. A phase-shift film (2) includes a structure in which a first layer (21) and a second layer (22) are layered in this order from a light-transmissive substrate side. The first layer (21) is provided so as to be in contact with a surface of the light-transmissive substrate (1). When the refractive indexes of the first layer (21) and the second layer (22) at the wavelength of the exposure light from the ArF excimer laser are defined as n1 and n2, respectively, n1<n2 is satisfied. When the extinction coefficients of the first layer (21) and the second layer (22) at the wavelength of the exposure light are defined as k1 and k2, respectively, k1<k2 is satisfied. When the film thicknesses of the first layer (21) and the second layer (22) are defined as d1 and d2, respectively, d1<d2 is satisfied. |
| priorityDate | 2018-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.