http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019192866-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e0bf0928b608797b70bbc2b91c7e52e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-5009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-261 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-263 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 2019-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3140a7aced92bc10cc0ca7f48c85b893 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e2dbf04961837c21507f9a92f3ee33a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9599027b1a642963a92c0e2db240b6c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e82d19c7fe263e92df99113f575926b |
| publicationDate | 2019-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2019192866-A1 |
| titleOfInvention | IMIDAZOLIDINETHIONE-CONTAINING COMPOSITIONS FOR POST-ASH RESIDUE REMOVAL AND/OR FOR OXIDATIVE ETCHING OF A LAYER OR MASK COMPRISING TiN |
| abstract | Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110767534-A |
| priorityDate | 2018-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 233.