http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019188148-A1

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filingDate 2019-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2019188148-A1
titleOfInvention Composite sintered body, semiconductor manufacturing device member, and method for manufacturing composite sintered body
abstract This composite sintered body comprises Al 2 O 3 and MgAl 2 O 4 . The Al 2 O 3 content in the composite sintered body is at least 95.5 wt%. The average sintered particle size of the Al 2 O 3 in the composite sintered body is 2 μm to 4 μm, inclusive. The standard deviation of the sintered particle size distribution of the Al 2 O 3 in the composite sintered body is no more than 0.35. The bulk density of the composite sintered body is 3.94 g/cm 3 to 3.98 g/cm 3 , inclusive. The ratio of the crystal phase amounts of the MgAl 2 O 4 and the Al 2 O 3 in the composite sintered body is 0.003 to 0.01, inclusive. Through this configuration, a composite sintered body having a high withstand voltage and a high volume resistivity can be provided.
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