Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6567 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-784 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-782 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-622 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 |
filingDate |
2019-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d3d8980eb7d5f14f862d149f3e54299 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c353628f7760eb0450131495e3891cab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1811c6011b1be8db1c2a45b804664e6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f094cc9b8191e358d30e992b465b84c |
publicationDate |
2019-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2019188148-A1 |
titleOfInvention |
Composite sintered body, semiconductor manufacturing device member, and method for manufacturing composite sintered body |
abstract |
This composite sintered body comprises Al 2 O 3 and MgAl 2 O 4 . The Al 2 O 3 content in the composite sintered body is at least 95.5 wt%. The average sintered particle size of the Al 2 O 3 in the composite sintered body is 2 μm to 4 μm, inclusive. The standard deviation of the sintered particle size distribution of the Al 2 O 3 in the composite sintered body is no more than 0.35. The bulk density of the composite sintered body is 3.94 g/cm 3 to 3.98 g/cm 3 , inclusive. The ratio of the crystal phase amounts of the MgAl 2 O 4 and the Al 2 O 3 in the composite sintered body is 0.003 to 0.01, inclusive. Through this configuration, a composite sintered body having a high withstand voltage and a high volume resistivity can be provided. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023068159-A1 |
priorityDate |
2018-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |