| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2019-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_324fc8ab164289507a8a9391d7056b15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0033574aeea20f8e3e4e47f75acef03e |
| publicationDate |
2019-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2019186331-A1 |
| titleOfInvention |
Semiconductor device |
| abstract |
Provided is a semiconductor device having a large on current and good reliability. The semiconductor device has: a first insulator; a first oxide upon the first insulator; a second oxide upon the first oxide; a third oxide and a fourth oxide that are upon the second oxide; a first conductor upon the third oxide; a second conductor upon the fourth oxide; a fifth oxide upon the second oxide; a second insulator upon the fifth oxide; and a third conductor positioned upon the second insulator and overlapping the second oxide. The fifth oxide abuts both the side surface of the third oxide and the side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide and the conductivity of the fourth oxide is higher than the conductivity of the second oxide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021191716-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355530-B2 |
| priorityDate |
2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |