| abstract |
A disclosed method of fabricating correlated electron material (CEM) devices, which may be used to perform a switching function, comprises: depositing one or more layers of a CEM film, for example, nickel oxide comprising from about 0.1 at% to about 2S.0 at% of carbonyl dopant, on a conductive substrate, annealing the CEM film, for example, in gaseous oxygen or nitrogen, to reduce the dopant concentration to about 0.1 at% to about 15.0 at%; and thereafter depositing a conductive overlay on the CEM film. |