http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019163811-A1

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filingDate 2019-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44d985d34758f553f5bee8c4aa2c7a37
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publicationDate 2019-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2019163811-A1
titleOfInvention Oxide film, production method for oxide film, and nitrogen-containing oxide sputtering target
abstract The present invention is characterized by: having, as the main phase thereof, an oxide including Al, Si, and Zn as the metal components thereof; containing 0.5–20 at.% nitrogen; and having the nitrogen present as a nitride. Ideally, the indentation hardness of the oxide film is 700–1,500 kgf/mm 2 . In addition, when a bending test is conducted at a film thickness of 50 nm, the reduction in water vapor transmittance after the bending test is ideally no more than 30% and the reduction in visible light transmittance no more than 5%.
priorityDate 2018-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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