http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019154945-A1

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filingDate 2019-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19afedbb3bc66a0ad734e408161b3d29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62f875aa95942215418fef41841e8efe
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publicationDate 2019-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2019154945-A1
titleOfInvention Methods of vapor deposition of ruthenium using an oxygen-free co-reactant
abstract Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods comprise delivering at least one precursor and an oxygen-free co-reactant, such as hydrazine or alkylhydrazine, to a substrate to form a ruthenium-containing film, wherein the at least one precursor corresponds in structure to Formula (I): (L)Ru(CO)3, wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-C6-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1- C6-alkyl, alkoxy and NR1R2; wherein R1 and R2 are independently alkyl or hydrogen; and annealing the ruthenium-containing film under vacuum or in the presence of an inert gas such as Ar, N2, or a reducing gas such as H2 or a combination thereof.
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priorityDate 2018-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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