http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019153725-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51cd25fb50949a6a798d90c5fe0b5fac |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2018-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6a162af391a5491484b9fe1674cd6ba |
| publicationDate | 2019-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2019153725-A1 |
| titleOfInvention | Image sensor, and method for manufacturing deep trench and through-silicon via thereof |
| abstract | Provided are an image sensor and a method for manufacturing a deep trench and a through-silicon via thereof. The method for manufacturing the deep trench and through-silicon via comprises: providing a pixel silicon wafer; carrying out silicon substrate thinning processing on a second side of the pixel silicon wafer; forming a deep trench on the second side of the pixel silicon wafer; filling the deep trench with organic matter; coating a photoresist on the second side of the pixel silicon wafer; etching the second side of the pixel silicon wafer according to a through-silicon via pattern so as to form a through-silicon via; depositing a dielectric protection layer on surfaces of the deep trench and the through-silicon via; filling the deep trench with organic matter; coating a photoresist on the second side of the pixel silicon wafer; etching the second side of the pixel silicon wafer according to a contact hole pattern so as to form a contact hole; depositing a barrier layer on the surfaces of the deep trench and the through-silicon via, filling the deep trench with a first metal and forming a seed crystal layer on the surface of the through-silicon via; and filling the through-silicon via with the first metal. The manufacturing method provided in the present invention simplifies a manufacturing process for an image sensor. |
| priorityDate | 2018-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.