http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019141635-A1

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filingDate 2019-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_774e22f77ef1a585ec7e5347f5cb5917
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publicationDate 2019-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2019141635-A1
titleOfInvention Method of laser irradiation of a patterned semiconductor device
abstract The present invention relates to a method of laser irradiation of a patterned semiconductor device comprising a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of said semiconductor device and defining an upper face of said periodic array opposite to said base face, each fin-like structure having: - a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; - a length along a second direction parallel to said base face and perpendicular to said first direction at least 3 times greater than said width; and - a height along a third direction perpendicular to said base face. said method of laser irradiation comprising the steps of: - generating a UV pulsed laser beam by means of a laser module; - irradiating at least a portion of said upper face with said laser beam, According to the invention, the method further comprises imparting a controlled state of polarization to said laser beam so as to selectively control the amount of energy of the laser beam coupled locally to each fin-like structure along the third direction.
priorityDate 2018-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.