| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6f119eb3de0b36fee05265590b4a02b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0b36e2aac8c14546a63ce6ed7caf9d0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_85d474094605a661b165d6a69d8a549b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_de1066e0769d2710f3b22ab719e66c1f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02494
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
2017-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1efea21c9bdb9a05b12439f5cbfa4a5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a7a877b7356315372fd802a13a90f66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17546a3e0356b7a089c7c8b260c82e46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9c619d874a5a7d3bd923f04c26464ec |
| publicationDate |
2019-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2019132908-A1 |
| titleOfInvention |
Polygon shaped crystalline material for iii-v transistors |
| abstract |
Embodiments herein describe techniques for a semiconductor device including a substrate. A channel base including a layer of GaN may be above the substrate. A channel stack may be above the channel base, where the channel stack may include a layer of GaN in the channel stack and a polarization layer above the layer of GaN in the channel stack. A polygon shaped crystalline material may cover a sidewall of the channel stack including the polarization layer and the layer of GaN in the channel stack. The polygon shaped crystalline material may include n-type doped GaN. Furthermore, an n-type doped InGaN area may be around the polygon shaped crystalline material and above the channel base. A source contact may be above the n-type doped InGaN area and in contact with the n-type doped InGaN area. Other embodiments may be described and/or claimed. |
| priorityDate |
2017-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |