| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate |
2017-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe39c6df588eba155303963de37fbfa2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_115f51e97bb6ed3e51a95fc581ba0dbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2723dd2eb79a6e07adeb2578153a0a14 |
| publicationDate |
2019-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2019132890-A1 |
| titleOfInvention |
Ferroelectric memory devices with integrated capacitors and methods of manufacturing the same |
| abstract |
Ferroelectric memory devices with integrated capacitors and methods of manufacturing the same. An example memory device includes a semiconductor fin, and a transistor associated with a first portion of the semiconductor fin. The memory device further includes a ferroelectric capacitor adjacent the transistor. A second portion of the semiconductor fin including a doped region corresponds to an electrode of the ferroelectric capacitor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114664834-A |
| priorityDate |
2017-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |