http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019108417-A1

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publicationDate 2019-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2019108417-A1
titleOfInvention Spin transfer torque (stt) magnetic memory using spin-orbit torque (sot)
abstract Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT segments injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction in order to improve the efficiency of the switching current applied to the magnetoresistive device.
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Total number of triples: 27.