http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019107729-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb1bec90258b94e7826cc6a2f92437bd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67034 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2018-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcb8d09a305b2475d41f548298094ee8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffbeb0a41f1f3eadbc889a22e37759cd |
| publicationDate | 2019-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2019107729-A1 |
| titleOfInvention | Dry cleaning apparatus and method for selectively removing polysilicon |
| abstract | The present invention relates to a dry cleaning apparatus and method for selectively removing polysilicon. The present invention comprises: supplying a fluorine-containing gas in a plasma state and a hydrogen-containing gas in a non-plasma state to a substrate on which a silicon oxide, silicon nitride and polysilicon are formed, so as to change the surface of silicon oxide and silicon nitride into ammonium hexafluorosilicate, thereby forming a protective film; stopping the supply of the hydrogen-containing gas and continuously supplying the fluorine-containing gas in the plasma state so as to selectively remove polysilicon by fluorine radicals; and, finally, a protective film removal step of removing, through annealing, the protective film made of ammonium hexafluorosilicate. According to the present invention, polysilicon can be selectively etched by changing the surface of silicon nitride and silicon oxide, which are formed on a substrate, into an ammonium hexafluorosilicate ((NH 4 ) 2 SiF 6 ) solid layer and using the ammonium hexafluorosilicate solid layer as a protective layer. |
| priorityDate | 2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.