| abstract |
Provided is a novel room temperature multiferroic magnetoelectric coupling bismuth-iron-oxide material. The structural formula of the material is ABxOy, wherein A is one or more of Bi, Pb, Sb, Sn or rare earth metal elements, and B is one or more of the transition metal elements Fe, Sc, Ti, V, Cr, Mn, Co, Ni, Zn and Cu. The material has a hexagonal crystal structure and has both ferroelectricity and ferrimagnetism with a transition temperature that is higher than room temperature. Also provided are a method for preparing a novel room temperature multiferroic magnetoelectric coupling bismuth-iron-oxide material, and an electronic device prepared using the novel room temperature multiferroic magnetoelectric coupling bismuth-iron-oxide material. |