| abstract |
A method involving: irradiating SF 6 gas plasma from the obverse face side and thereby etching a semiconductor wafer 1 exposed at street portions thereof, dividing and fragmenting the wafer into individual semiconductor chips 7; adhering a release tape 16, formed by providing an adhesive layer 16b to a base material film 16a, from the obverse face side of a mask layer 3b; peeling off the release tape 16 along with the mask layer 3b after adhering and curing the release tape 16, that is to say, adhering the mask layer 3b to the release tape 16 then peeling off the mask layer 3b from a pattern surface 2. |