| abstract |
Disclosed are a global-exposure photosensitive detector based on a composite dielectric gate MOSFET, an imaging chip formed using the photosensitive detector, and a detection method. The photosensitive detector comprises an array formed of multiple detection units, each detection unit comprising a light-sensing transistor (1), a charge storage transistor (2) and a reading transistor (3), or comprising a light-sensing transistor, a charge transfer transistor (4), a charge storage transistor and a reading transistor, wherein the light-sensing transistor is used for realizing the light-sensing function of the photosensitive detector, the charge storage transistor is used for storing light-produced charges, the reading transistor is used for reading a signal, and the charge transfer transistor is used for controlling the transfer of the light-produced charges. The photosensitive detector can realize global exposure and fast reading, is compatible with an existing floating gate CMOS process, and the failure of any pixel will not affect the normal operation of the whole imaging array. |