http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019069752-A1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
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filingDate 2018-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60160a0aaa70673a514b38c69a64e267
publicationDate 2019-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2019069752-A1
titleOfInvention Solid-state imaging device and electronic device
abstract The present invention relates to a semiconductor imaging element in which image quality can be improved. The present invention relates to a semiconductor imaging element comprising at least a first electrode, a second electrode, a third electrode, a first photoelectric conversion unit, a second photoelectric conversion unit, a first insulating layer, a second layer. insulator and an optical waveguide, the second electrode, the first photoelectric converting unit and the first electrode being arranged in this order; the third electrode is formed to be separated from the first electrode and to face the first photoelectric conversion unit with the first insulating layer interposed therebetween; the second insulating layer is formed between the third electrode and the second photoelectric conversion unit; and the optical waveguide is formed between the third electrode and the second photoelectric conversion unit.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023037621-A1
priorityDate 2017-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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