| abstract |
Techniques and mechanisms for providing a complementary metal oxide semiconductor (CMOS) circuit that includes a Group III (III-N) nitride material. According to one embodiment, an n-type transistor of the CMOS circuit comprises structures that are arranged in a variety of ways on a Group III-N semiconductor material. The n-type transistor is coupled to a p-type transistor of the CMOS circuit, a channel region of the p-type transistor comprising a Group III-V semiconductor material. The channel region is configured to conduct a current along a first direction, a surface portion of the Group III-N semiconductor material extending along a second direction perpendicular to the second direction. According to another embodiment, the group III-N semiconductor material comprises a gallium nitride (GaN) compound, and the group III-V semiconductor material comprises a nanoparticle of an antimonide compound. indium (InSb). |