| abstract |
The invention relates to group III-V semiconductor fuses and methods for their manufacture. In one example, a fuse includes a layer of gallium nitride on a substrate. An oxide layer is disposed in a trench in the gallium nitride layer. A first contact is on the gallium nitride layer on a first side of the trench, the first contact comprising indium, gallium and nitrogen. A second contact is on the gallium nitride layer on a second side of the trench, the second side being opposite the first side, the second contact comprising indium, gallium and nitrogen. A filament is on the oxide layer in the trench, the filament being coupled to the first contact and the second contact, the filament comprising indium, gallium and nitrogen. |