| abstract |
The invention relates to gallium nitride (GaN) transistors with source and drain field plates. In one example, a transistor includes a layer of gallium nitride (GaN) over a substrate, a gate structure on the GaN layer, a source region on a first side of the gate structure, a region drain on a second side of the gate structure, the second side opposite the first side, a source field plate above the source region, and a drain field plate above the drain region . |