| abstract |
The present invention relates to quantum dot devices, as well as methods and associated computing devices. For example, in some embodiments, a quantum dot device may include a silicon substrate (111), a germanium quantum well layer (111) above the substrate, and a plurality of grids above the substrate. quantum well layer. In some embodiments, a quantum dot device may include a silicon substrate, an insulating material above the silicon substrate, a quantum well layer above the insulating material, and a plurality of grids above the quantum well layer. |