Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_728dd385ea6c319e23b35092c2fd190d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13069 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2018-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e24b5748725867b021e65854e03dba75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d26cdb9cd48153f5ab2ed03f3e22854a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f4f660a9a238fbbbe6afa2e4ff1cc56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4cf4e37885373e2df97b662e106b7b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b03978999ef36dd77c7a7a2376408ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ac90964b60f8db48e2050ddc0c94957 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb915bd13339654156e0f5f3b857f6fe |
publicationDate |
2019-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2019062260-A1 |
titleOfInvention |
THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, NETWORK SUBSTRATE, AND DISPLAY DEVICE |
abstract |
The invention discloses a method for fabricating a thin film transistor, and an array substrate and a display device. The method for fabricating the above thin film transistor includes: forming a buffer layer on the substrate; forming a polysilicon layer on the buffer layer; patterning the polysilicon layer to form an active layer; depositing a gate insulating layer on the active layer; and insulating the gate a gate metal layer is deposited on the layer, and the gate metal layer is dry etched by using a gas containing CO as an etching gas to form a gate; the gate is used as a mask to ion-implant the active layer. A source region and a drain region are formed; a passivation layer is deposited on the gate electrode, and a via hole is formed in the gate insulating layer and the passivation layer, and a source and a drain are formed. |
priorityDate |
2017-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |