| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fadc7053cc8f65662814ff1b502e0b03 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-00905
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2220-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2220-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-00846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2220-80 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J20-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J20-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J20-282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J20-28028 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01L3-00 |
| filingDate |
2018-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47aef2283638d8414451ce5fc8db4592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f24e4860f30c0bee00c0efffb9089795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb7395dace29b1ab80ec6ba65ffec26b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8f4c0a6e5c98a175c47b18abc2453b1 |
| publicationDate |
2019-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2019043270-A1 |
| titleOfInvention |
CHEMICAL REACTORS |
| abstract |
The invention relates to a method for producing a chemical reactor device on the basis of a fluid flow 5. The method comprises obtaining a substrate with a fluid channel defined by a channel wall, wherein an ordered set of silicon pillar structures is positioned in the fluid channel, and the electrochemical anodizing of at least the silicon pillar structures to make them porous at least to a certain depth. After anodization, the substrate and abutment structures are heat-treated, the treatment being carried out at temperatures, times and atmospheres such that any formed silicon oxide layer has a thickness of less than 20 nm. The substrate and pillar structures are further functionalized. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022144786-A1 |
| priorityDate |
2017-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |