http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019041490-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75b85b30eaa65e4dd97668ef24bf8bbd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-855 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-22 |
| filingDate | 2017-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce020f7b71a1d22355d98762a5d4f068 |
| publicationDate | 2019-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2019041490-A1 |
| titleOfInvention | Method for preparing GaN thermoelectric film material |
| abstract | The invention relates to a method for manufacturing a GaN thermoelectric thin film material. The method utilizes a patterned sapphire substrate that undergoes H2 purification, low temperature buffered growth, heated cross sectional growth and pressure annealing to produce the GaN thin film material. The GaN thermoelectric thin film material thus manufactured has a high overall uniformity, a high breakdown voltage, an extended service life and improved application prospects. |
| priorityDate | 2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.