| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0602
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0632
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-0883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-62 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26e58568c4f42b1c8624d9bb1a09013d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_040bc5f872719eb450c284d18867aa8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34223698a5d99815ff1326515b6cad6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35033448a14c4092423fc734deaf38b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e53fd8980f66ae90bf15b9e82a51f59e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60a87d17a16496481a6bbcfe564c35ce |
| publicationDate |
2019-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2019038892-A1 |
| titleOfInvention |
Group 13 element nitride layer, free-standing substrate and functional element |
| abstract |
PROBLEM TO BE SOLVED: To reduce the dislocation density in a Group 13 element nitride crystal layer having top and bottom surfaces comprising a Group 13 element nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or mixed crystals thereof, and the whole Provide a microstructure that can reduce variations in characteristics over the A linear high-intensity light emitting portion 5 and a low-intensity light emitting region 6 adjacent to the high-intensity light emitting portion 5 when the top surface 13a of a group 13 element nitride crystal layer 13 is observed by cathodoluminescence . It is characterized in that the half value width of (0002) plane reflection of the X-ray rocking curve on the upper surface 13a is 3000 seconds or less and 20 seconds or more. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020073438-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021100242-A1 |
| priorityDate |
2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |