| abstract |
Tunneling effect tunneling transistors (TFETs) and associated methods and computing devices are disclosed. In some embodiments, a TFET may include: a first source / drain material having p-type conductivity; a second source / drain material having n-type conductivity; a channel material at least partially between the first source / drain material and the second source / drain material, the channel material having a first side face and a second side face opposite the first side face; and a grid above the channel material, on the first side face and the second side face. |