| abstract |
The invention relates to a method for manufacturing a GaN substrate material, in a multifunctional halide vapor phase epitaxy (HVPE) growth system, thin films of Ga 3 O 3 and GaN in situ and extending outwardly, comprising: firstly, growing a gallium oxide thin film using a HVPE type method on a substrate such as sapphire, and nitriding gallium oxide in an atmosphere of ammonia to form a structured thin film of GaN / Ga 2 O 3 compound; then growing a thick film of GaN HVPE on the GaN / Ga 2 O 3 structured thin film to acquire a high quality GaN thick film material; using chemical corrosion to remove the gallium oxide layer to acquire a self-supported GaN substrate material; or using a conventional laser etching process to effect separation of the thick GaN film from a heterogeneous substrate such as sapphire, thereby producing a self-supported GaN substrate material. |