Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2018-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8171b8985a82b2584167dbf4eef88b81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c3d51096eec1f78fecb1e18a98f4e3e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_decb2eaa563e50c8d83c1d9e918e2c3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac403b38b142e2ce65d41a9ae257430b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a28d8e73033958a0df7a852fe4f7209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39cce606f886637cd8318cefad8c9d80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_621b2912540f8fca3cc01777dcbefbac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67aba3dc88660c4d25b4a2af7573bed3 |
publicationDate |
2019-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2019032457-A1 |
titleOfInvention |
METHODS AND APPARATUSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS |
abstract |
This invention relates to methods and apparatuses for forming a SiCON-encapsulating film on a surface. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing treatment to form a damage resistant film by rapid heat treatment or calcination. The film is processed by rapid heat treatment and then annealed at high temperature to form a film having a low dielectric constant. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11466038-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021202244-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I817139-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021252788-A1 |
priorityDate |
2017-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |