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publicationDate 2019-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2019032457-A1
titleOfInvention METHODS AND APPARATUSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS
abstract This invention relates to methods and apparatuses for forming a SiCON-encapsulating film on a surface. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing treatment to form a damage resistant film by rapid heat treatment or calcination. The film is processed by rapid heat treatment and then annealed at high temperature to form a film having a low dielectric constant.
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