| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2018-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e0f392d18106711c48edd6afb616c73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38ff1a91dbc872ef0c9588ab0611429c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5c12387c380b082acfe1c5c3a847b76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f3edd808a38c8eb882cbbcb19bdd830 |
| publicationDate |
2019-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2019016642-A1 |
| titleOfInvention |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| abstract |
The invention relates to a semiconductor device having stable electrical characteristics. The invention further relates to a highly reliable semiconductor device. The present invention uses: a first conductor and a second conductor on a first metal oxide; a second metal oxide on the first conductor, the second conductor and the first metal oxide; a first insulator on the second metal oxide; a first barrier layer on the first insulator; a third conductor on the first barrier layer; and a second barrier layer on the third conductor. The first barrier layer contacts the second barrier layer on a side surface of the third conductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3945596-A1 |
| priorityDate |
2017-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |