| abstract |
The present invention provides systems, methods and apparatus for use in soliciting and driving high voltage semiconductor devices (T1, T2) using only low voltage transistors (within 410). The apparatus (410) and the method are adapted to control multiple high voltage semiconductor devices (T1, T2) to enable high voltage power control, such as power amplifiers, and to enable management. and a power conversion (eg DC / DC) as well as other applications, a first voltage (Vin) being important compared to the maximum voltage management of the low voltage control transistors (Vdd1, Vdd2). In one aspect, an edge control command (Fig. 4: 215, Fig. 14a: 1410) of a control signal (IN) for high voltage semiconductor devices (T1, T2) is provided by a base edge delay circuit (Fig. 4: within 215, Fig. 14a: 1410) which comprises a transistor, a current source and a capacitor. An inverter may be selectively coupled, via a switch, to an input and / or an output of the base edge delay circuit so as to provide synchronization control of a rising edge or a falling edge of the control signal. |