| abstract |
The present invention relates to ferroelectric field effect transistors (FeFETs) having band-modified interface layers. In one example, an integrated circuit structure includes a semiconductor channel layer on a substrate. A metal oxide material is on the semiconductor channel layer, the metal oxide material having no net dipole. A ferroelectric oxide material is on the metal oxide material. A gate electrode is on the ferroelectric oxide material, the gate electrode having a first side and a second side opposite to the first side. A first source / drain region is at the first side of the gate electrode and a second source / drain region is on the second side of the gate electrode. |